Block read count voltage adjustment

ABSTRACT

Disclosed in some examples, are methods, systems, and machine readable mediums which compensate for read-disturb effects by shifting the read voltages used to read the value in a NAND cell based upon a read counter. For example, the NAND memory device may have a read counter that corresponds to a group of NAND cells (e.g., a page, a block, a superblock). Anytime a NAND cell in the group is read, the read counter may be incremented. The read voltage, Vread, may be adjusted based on the read counter to account for the read disturb voltage.

PRIORITY APPLICATION

This application is a continuation of and claims priority to U.S.application Ser. No. 16/448,502, filed on Jun. 21, 2019, which is acontinuation of and claims priority to U.S. application Ser. No.15/799,616, filed Oct. 31, 2017, each of which is incorporated herein byreference in its entirety.

BACKGROUND

Memory devices are typically provided as internal, semiconductor,integrated circuits in computers or other electronic devices. There aremany different types of memory, including volatile and non-volatilememory.

Volatile memory requires power to maintain its data, and includesrandom-access memory (RAM), dynamic random-access memory (DRAM), orsynchronous dynamic random-access memory (SDRAM), among others.

Non-volatile memory can retain stored data when not powered, andincludes flash memory, read-only memory (ROM), electrically erasableprogrammable ROM (EEPROM), static RAM (SRAM), erasable programmable ROM(EPROM), resistance variable memory, such as phase-change random-accessmemory (PCRAM), resistive random-access memory (RRAM), magnetoresistiverandom-access memory (MRAM), or 3D XPoint™ memory, among others.

Flash memory is utilized as non-volatile memory for a wide range ofelectronic applications. Flash memory devices typically include one ormore groups of one-transistor, floating gate or charge trap memory cellsthat allow for high memory densities, high reliability, and low powerconsumption.

Two common types of flash memory array architectures include NAND andNOR architectures, named after the logic form in which the basic memorycell configuration of each is arranged. The memory cells of the memoryarray are typically arranged in a matrix. In an example, the gates ofeach floating gate memory cell in a row of the array are coupled to anaccess line (e.g., a word line). In a NOR architecture, the drains ofeach memory cell in a column of the array are coupled to a data line(e.g., a bit line). In a NAND architecture, the drains of each memorycell in a string of the array are coupled together in series, source todrain, between a source line and a bit line.

Both NOR and NAND architecture semiconductor memory arrays are accessedthrough decoders that activate specific memory cells by selecting theword line coupled to their gates. In a NOR architecture semiconductormemory array, once activated, the selected memory cells place their datavalues on bit lines, causing different currents to flow depending on thestate at which a particular cell is programmed. In a NAND architecturesemiconductor memory array, a high bias voltage is applied to adrain-side select gate (SGD) line. Word lines coupled to the gates ofthe unselected memory cells of each group are driven at a specified passvoltage (e.g., Vpass) to operate the unselected memory cells of eachgroup as pass transistors (e.g., to pass current in a manner that isunrestricted by their stored data values). Current then flows from thesource line to the bit line through each series coupled group,restricted only by the selected memory cells of each group, placingcurrent encoded data values of selected memory cells on the bit lines.

Each flash memory cell in a NOR or NAND architecture semiconductormemory array can be programmed individually or collectively to one or anumber of programmed states. For example, a single-level cell (SLC) canrepresent one of two programmed states (e.g., 1 or 0), representing onebit of data.

However, flash memory cells can also represent one of more than twoprogrammed states, allowing the manufacture of higher density memorieswithout increasing the number of memory cells, as each cell canrepresent more than one binary digit (e.g., more than one bit). Suchcells can be referred to as multi-state memory cells, multi-digit cells,or multi-level cells (MLCs). In certain examples, MLC can refer to amemory cell that can store two bits of data per cell (e.g., one of fourprogrammed states), a triple-level cell (TLC) can refer to a memory cellthat can store three bits of data per cell (e.g., one of eightprogrammed states), and a quad-level cell (QLC) can store four bits ofdata per cell. MLC is used herein in its broader context, to can referto any memory cell that can store more than one bit of data per cell(i.e., that can represent more than two programmed states).

Traditional memory arrays are two-dimensional (2D) structures arrangedon a surface of a semiconductor substrate. To increase memory capacityfor a given area, and to decrease cost, the size of the individualmemory cells has decreased. However, there is a technological limit tothe reduction in size of the individual memory cells, and thus, to thememory density of 2D memory arrays. In response, three-dimensional (3D)memory structures, such as 3D NAND architecture semiconductor memorydevices, are being developed to further increase memory density andlower memory cost.

Such 3D NAND devices often include strings of storage cells, coupled inseries (e.g., drain to source), between one or more source-side selectgates (SGSs) proximate a source, and one or more drain-side select gates(SGDs) proximate a bit line. In an example, the SGSs or the SGDs caninclude one or more field-effect transistors (FETs) or metal-oxidesemiconductor (MOS) structure devices, etc. In some examples, thestrings will extend vertically, through multiple vertically spaced tierscontaining respective word lines. A semiconductor structure (e.g., apolysilicon structure) may extend adjacent a string of storage cells toform a channel for the storages cells of the string. In the example of avertical string, the polysilicon structure may be in the form of avertically extending pillar. In some examples the string may be“folded,” and thus arranged relative to a U-shaped pillar. In otherexamples, multiple vertical structures may be stacked upon one anotherto form stacked arrays of storage cell strings.

Memory arrays or devices can be combined together to form a storagevolume of a memory system, such as a solid-state drive (SSD), aUniversal Flash Storage (UFS™) device, a MultiMediaCard (MMC)solid-state storage device, an embedded MMC device (eMMC™), etc. An SSDcan be used as, among other things, the main storage device of acomputer, having advantages over traditional hard drives with movingparts with respect to, for example, performance, size, weight,ruggedness, operating temperature range, and power consumption. Forexample, SSDs can have reduced seek time, latency, or other delayassociated with magnetic disk drives (e.g., electromechanical, etc.).SSDs use non-volatile memory cells, such as flash memory cells toobviate internal battery supply requirements, thus allowing the drive tobe more versatile and compact.

An SSD can include a number of memory devices, including a number ofdies or logical units (e.g., logical unit numbers or LUNs), and caninclude one or more processors or other controllers performing logicfunctions required to operate the memory devices or interface withexternal systems. Such SSDs may include one or more flash memory die,including a number of memory arrays and peripheral circuitry thereon.The flash memory arrays can include a number of blocks of memory cellsorganized into a number of physical pages. In many examples, the SSDswill also include DRAM or SRAM (or other forms of memory die or othermemory structures). The SSD can receive commands from a host inassociation with memory operations, such as read or write operations totransfer data (e.g., user data and associated integrity data, such aserror data and address data, etc.) between the memory devices and thehost, or erase operations to erase data from the memory devices.

BRIEF DESCRIPTION OF THE DRAWINGS

In the drawings, which are not necessarily drawn to scale, like numeralsmay describe similar components in different views. Like numerals havingdifferent letter suffixes may represent different instances of similarcomponents. The drawings illustrate generally, by way of example, butnot by way of limitation, various embodiments discussed in the presentdocument.

FIG. 1 illustrates an example of an environment including a memorydevice.

FIGS. 2-3 illustrate schematic diagrams of an example of a 3D NANDarchitecture semiconductor memory array.

FIG. 4 illustrates an example block diagram of a memory module.

FIG. 5 shows a diagram of reading NAND cells according to some examplesof the present disclosure.

FIG. 6 shows a diagram of a read disturb effect on a charge distributionof a NAND memory cells according to some examples of the presentdisclosure.

FIG. 7 shows a flowchart of a method of reading a NAND memory cellaccording to some examples of the present disclosure.

FIG. 8 shows a schematic of a memory controller according to someexamples of the present disclosure.

FIG. 9 is a block diagram illustrating an example of a machine uponwhich one or more embodiments may be implemented.

DETAILED DESCRIPTION

Electronic devices, such as mobile electronic devices (e.g., smartphones, tablets, etc.), electronic devices for use in automotiveapplications (e.g., automotive sensors, control units, driver-assistancesystems, passenger safety or comfort systems, etc.), andinternet-connected appliances or devices (e.g., internet-of-things (IoT)devices, etc.), have varying storage needs depending on, among otherthings, the type of electronic device, use environment, performanceexpectations, etc.

Electronic devices can be broken down into several main components: aprocessor (e.g., a central processing unit (CPU) or other mainprocessor); memory (e.g., one or more volatile or non-volatilerandom-access memory (RAM) memory device, such as dynamic RAM (DRAM),mobile or low-power double-data-rate synchronous DRAM (DDR SDRAM),etc.); and a storage device (e.g., non-volatile memory (NVM) device,such as flash memory, read-only memory (ROM), an SSD, an MMC, or othermemory card structure or assembly, etc.). In certain examples,electronic devices can include a user interface (e.g., a display,touch-screen, keyboard, one or more buttons, etc.), a graphicsprocessing unit (GPU), a power management circuit, a baseband processoror one or more transceiver circuits, etc.

FIG. 1 illustrates an example of an environment 100 including a hostdevice 105 and a memory device 110 configured to communicate over acommunication interface. The host device 105 or the memory device 110may be included in a variety of products 150, such as Internet of Things(IoT) devices (e.g., a refrigerator or other appliance, sensor, motor oractuator, mobile communication device, automobile, drone, etc.) tosupport processing, communications, or control of the product 150.

The memory device 110 includes a memory controller 115 and a memoryarray 120 including, for example, a number of individual memory die(e.g., a stack of three-dimensional (3D) NAND die). In 3D architecturesemiconductor memory technology, vertical structures are stacked,increasing the number of tiers, physical pages, and accordingly, thedensity of a memory device (e.g., a storage device). In an example, thememory device 110 can be a discrete memory or storage device componentof the host device 105. In other examples, the memory device 110 can bea portion of an integrated circuit (e.g., system on a chip (SOC), etc.),stacked or otherwise included with one or more other components of thehost device 105.

One or more communication interfaces can be used to transfer databetween the memory device 110 and one or more other components of thehost device 105, such as a Serial Advanced Technology Attachment (SATA)interface, a Peripheral Component Interconnect Express (PCIe) interface,a Universal Serial Bus (USB) interface, a Universal Flash Storage (UFS)interface, an eMMC™ interface, or one or more other connectors orinterfaces. The host device 105 can include a host system, an electronicdevice, a processor, a memory card reader, or one or more otherelectronic devices external to the memory device 110. In some examples,the host 105 may be a machine having some portion, or all, of thecomponents discussed in reference to the machine 900 of FIG. 9.

The memory controller 115 can receive instructions from the host 105,and can communicate with the memory array, such as to transfer data to(e.g., write or erase) or from (e.g., read) one or more of the memorycells, planes, sub-blocks, blocks, or pages of the memory array. Thememory controller 115 can include, among other things, circuitry orfirmware, including one or more components or integrated circuits. Forexample, the memory controller 115 can include one or more memorycontrol units, circuits, or components configured to control accessacross the memory array 120 and to provide a translation layer betweenthe host 105 and the memory device 110. The memory controller 115 caninclude one or more input/output (I/O) circuits, lines, or interfaces totransfer data to or from the memory array 120. The memory controller 115can include a memory manager 125 and an array controller 135.

The memory manager 125 can include, among other things, circuitry orfirmware, such as a number of components or integrated circuitsassociated with various memory management functions. For purposes of thepresent description example memory operation and management functionswill be described in the context of NAND memory. Persons skilled in theart will recognize that other forms of non-volatile memory may haveanalogous memory operations or management functions. Such NANDmanagement functions include wear leveling (e.g., garbage collection orreclamation), error detection or correction, block retirement, or one ormore other memory management functions. The memory manager 125 can parseor format host commands (e.g., commands received from a host) intodevice commands (e.g., commands associated with operation of a memoryarray, etc.), or generate device commands (e.g., to accomplish variousmemory management functions) for the array controller 135 or one or moreother components of the memory device 110.

The memory manager 125 can include a set of management tables 130configured to maintain various information associated with one or morecomponent of the memory device 110 (e.g., various information associatedwith a memory array or one or more memory cells coupled to the memorycontroller 115). For example, the management tables 130 can includeinformation regarding block age, block erase count, error history, orone or more error counts (e.g., a write operation error count, a readbit error count, a read operation error count, an erase error count,etc.) for one or more blocks of memory cells coupled to the memorycontroller 115. In certain examples, if the number of detected errorsfor one or more of the error counts is above a threshold, the bit errorcan be referred to as an uncorrectable bit error. The management tables130 can maintain a count of correctable or uncorrectable bit errors,among other things.

The array controller 135 can include, among other things, circuitry orcomponents configured to control memory operations associated withwriting data to, reading data from, or erasing one or more memory cellsof the memory device 110 coupled to the memory controller 115. Thememory operations can be based on, for example, host commands receivedfrom the host 105, or internally generated by the memory manager 125(e.g., in association with wear leveling, error detection or correction,etc.).

The array controller 135 can include an error correction code (ECC)component 140, which can include, among other things, an ECC engine orother circuitry configured to detect or correct errors associated withwriting data to or reading data from one or more memory cells of thememory device 110 coupled to the memory controller 115. The memorycontroller 115 can be configured to actively detect and recover fromerror occurrences (e.g., bit errors, operation errors, etc.) associatedwith various operations or storage of data, while maintaining integrityof the data transferred between the host 105 and the memory device 110,or maintaining integrity of stored data (e.g., using redundant RAIDstorage, etc.), and can remove (e.g., retire) failing memory resources(e.g., memory cells, memory arrays, pages, blocks, etc.) to preventfuture errors.

The memory array 120 can include several memory cells arranged in, forexample, a number of devices, planes, sub-blocks, blocks, or pages. Asone example, a 48 GB TLC NAND memory device can include 18,592 bytes (B)of data per page (16,384+2208 bytes), 1536 pages per block, 548 blocksper plane, and 4 or more planes per device. As another example, a 32 GBMLC memory device (storing two bits of data per cell (i.e., 4programmable states)) can include 18,592 bytes (B) of data per page(16,384+2208 bytes), 1024 pages per block, 548 blocks per plane, and 4planes per device, but with half the required write time and twice theprogram/erase (P/E) cycles as a corresponding TLC memory device. Otherexamples can include other numbers or arrangements. In some examples, amemory device, or a portion thereof, may be selectively operated in SLCmode, or in a desired MLC mode (such as TLC. QLC, etc.).

In operation, data is typically written to or read from the NAND memorydevice 110 in pages, and erased in blocks. However, one or more memoryoperations (e.g., read, write, erase, etc.) can be performed on largeror smaller groups of memory cells, as desired. The data transfer size ofa NAND memory device 110 is typically referred to as a page, whereas thedata transfer size of a host is typically referred to as a sector.

Although a page of data can include a number of bytes of user data(e.g., a data payload including a number of sectors of data) and itscorresponding metadata, the size of the page often refers only to thenumber of bytes used to store the user data. As an example, a page ofdata having a page size of 4 KB may include 4 KB of user data (e.g., 8sectors assuming a sector size of 512 B) as well as a number of bytes(e.g., 32 B, 54 B, 224 B, etc.) of metadata corresponding to the userdata, such as integrity data (e.g., error detecting or correcting codedata), address data (e.g., logical address data, etc.), or othermetadata associated with the user data.

Different types of memory cells or memory arrays 120 can provide fordifferent page sizes, or may require different amounts of metadataassociated therewith. For example, different memory device types mayhave different bit error rates, which can lead to different amounts ofmetadata necessary to ensure integrity of the page of data (e.g., amemory device with a higher bit error rate may require more bytes oferror correction code data than a memory device with a lower bit errorrate). As an example, a multi-level cell (MLC) NAND flash device mayhave a higher bit error rate than a corresponding single-level cell(SLC) NAND flash device. As such, the MLC device may require moremetadata bytes for error data than the corresponding SLC device.

FIG. 2 illustrates an example schematic diagram of a 3D NANDarchitecture semiconductor memory array 200 including a number ofstrings of memory cells (e.g., first-third A₀ memory strings205A₀-207A₀, first-third A_(n) memory strings 205A_(n)-207A_(n),first-third B₀ memory strings 205B₀-207B₀, first-third B_(n) memorystrings 205B_(n)-207B_(n), etc.), organized in blocks (e.g., block A201A, block B 201B, etc.) and sub-blocks (e.g., sub-block A₀ 201A₀,sub-block A_(n) 201A_(n), sub-block B₀ 201B₀ sub-block B_(n) 201B_(n),etc.). The memory array 200 represents a portion of a greater number ofsimilar structures that would typically be found in a block, device, orother unit of a memory device.

Each string of memory cells includes a number of tiers of charge storagetransistors (e.g., floating gate transistors, charge-trappingstructures, etc.) stacked in the Z direction, source to drain, between asource line (SRC) 235 or a source-side select gate (SGS) (e.g.,first-third A₀ SGS 231A₀-233A₀, first-third A_(n) SGS 231A_(n)-233A_(n),first-third B₀ SGS 231B₀-233B₀, first-third B SGS 231B_(n)-233B_(n),etc.) and a drain-side select gate (SGD) (e.g., first-third A₀ SGD226A₀-228A₀, first-third A_(n) SGD 226A_(n)-228A_(n), first-third B₀ SGD226B₀-228B₀, first-third B_(n) SGD 226B_(n)-228B_(n), etc.). Each stringof memory cells in the 3D memory array can be arranged along the Xdirection as data lines (e.g., bit lines (BL) BL0-BL2 220-222), andalong the Y direction as physical pages.

Within a physical page, each tier represents a row of memory cells, andeach string of memory cells represents a column. A sub-block can includeone or more physical pages. A block can include a number of sub-blocks(or physical pages) (e.g., 128, 256, 384, etc.). Although illustratedherein as having two blocks, each block having two sub-blocks, eachsub-block having a single physical page, each physical page having threestrings of memory cells, and each string having 8 tiers of memory cells,in other examples, the memory array 200 can include more or fewerblocks, sub-blocks, physical pages, strings of memory cells, memorycells, or tiers. For example, each string of memory cells can includemore or fewer tiers (e.g., 16, 32, 64, 128, etc.), as well as one ormore additional tiers of semiconductor material above or below thecharge storage transistors (e.g., select gates, data lines, etc.), asdesired. As an example, a 48 GB TLC NAND memory device can include18,592 bytes (B) of data per page (16,384+2208 bytes), 1536 pages perblock, 548 blocks per plane, and 4 or more planes per device.

Each memory cell in the memory array 200 includes a control gate (CG)coupled to (e.g., electrically or otherwise operatively connected to) anaccess line (e.g., word lines (WL) WL0 ₀-WL7 ₀ 210A-217A, WL0 ₁-WL7 ₁210B-217B, etc.), which collectively couples the control gates (CGs)across a specific tier, or a portion of a tier, as desired. Specifictiers in the 3D memory array, and accordingly, specific memory cells ina string, can be accessed or controlled using respective access lines.Groups of select gates can be accessed using various select lines. Forexample, first-third A₀ SGD 226A₀-228A₀ can be accessed using an A₀ SGDline SGDA₀ 225A₀, first-third A_(n) SGD 226A_(n)-228A_(n) can beaccessed using an A_(n) SGD line SGDA_(n) 225A_(n), first-third B₀ SGD226B₀-228B₀ can be accessed using an B₀ SGD line SGDB₀ 225B₀, andfirst-third B_(n) SGD 226B_(n)-228B_(n) can be accessed using an B_(n)SGD line SGDB_(n) 225B_(n). First-third A₀ SGS 231A₀-233A₀ andfirst-third A_(n) SGS 231A_(n)-233A_(n) can be accessed using a gateselect line SGS₀ 230A, and first-third B₀ SGS 231B₀-233B₀ andfirst-third B_(n) SGS 231B_(n)-233B_(n) can be accessed using a gateselect line SGS₁ 230B.

In an example, the memory array 200 can include a number of levels ofsemiconductor material (e.g., polysilicon, etc.) configured to couplethe control gates (CGs) of each memory cell or select gate (or a portionof the CGs or select gates) of a respective tier of the array. Specificstrings of memory cells in the array can be accessed, selected, orcontrolled using a combination of bit lines (BLs) and select gates,etc., and specific memory cells at one or more tiers in the specificstrings can be accessed, selected, or controlled using one or moreaccess lines (e.g., word lines).

FIG. 3 illustrates an example schematic diagram of a portion of a NANDarchitecture semiconductor memory array 300 including a plurality ofmemory cells 302 arranged in a two-dimensional array of strings (e.g.,first-third strings 305-307) and tiers (e.g., illustrated as respectiveword lines (WL) WL0-WL7 310-317, a drain-side select gate (SGD) line325, a source-side select gate (SGS) line 330, etc.), and senseamplifiers or devices 360. For example, the memory array 300 canillustrate an example schematic diagram of a portion of one physicalpage of memory cells of a 3D NAND architecture semiconductor memorydevice, such as illustrated in FIG. 2.

Each string of memory cells is coupled to a source line (SRC) using arespective source-side select gate (SGS) (e.g., first-third SGS331-333), and to a respective data line (e.g., first-third bit lines(BL) BL0-BL2 320-322) using a respective drain-side select gate (SGD)(e.g., first-third SGD 326-328). Although illustrated with 8 tiers(e.g., using word lines (WL) WL0-WL7 310-317) and three data lines(BL0-BL2 326-328) in the example of FIG. 3, other examples can includestrings of memory cells having more or fewer tiers or data lines, asdesired.

In a NAND architecture semiconductor memory array, such as the examplememory array 300, the state of a selected memory cell 302 can beaccessed by sensing a current or voltage variation associated with aparticular data line containing the selected memory cell. The memoryarray 300 can be accessed (e.g., by a control circuit, one or moreprocessors, digital logic, etc.) using one or more drivers. In anexample, one or more drivers can activate a specific memory cell, or setof memory cells, by driving a particular potential to one or more datalines (e.g., bit lines BL0-BL2), access lines (e.g., word linesWL0-WL7), or select gates, depending on the type of operation desired tobe performed on the specific memory cell or set of memory cells.

To program or write data to a memory cell, a programming voltage (Vpgm)(e.g., one or more programming pulses, etc.) can be applied to selectedword lines (e.g., WL4), and thus, to a control gate of each memory cellcoupled to the selected word lines (e.g., first-third control gates(CGs) 341-343 of the memory cells coupled to WL4). Programming pulsescan begin, for example, at or near 15V, and, in certain examples, canincrease in magnitude during each programming pulse application. Whilethe program voltage is applied to the selected word lines, a potential,such as a ground potential (e.g., Vss), can be applied to the data lines(e.g., bit lines) and substrates (and thus the channels, between thesources and drains) of the memory cells targeted for programming,resulting in a charge transfer (e.g., direct injection orFowler-Nordheim (FN) tunneling, etc.) from the channels to the floatinggates of the targeted memory cells.

In contrast, a pass voltage (Vpass) can be applied to one or more wordlines having memory cells that are not targeted for programming, or aninhibit voltage (e.g., Vcc) can be applied to data lines (e.g., bitlines) having memory cells that are not targeted for programming, forexample, to inhibit charge from being transferred from the channels tothe floating gates of such non-targeted memory cells. The pass voltagecan be variable, depending, for example, on the proximity of the appliedpass voltages to a word line targeted for programming. The inhibitvoltage can include a supply voltage (Vcc), such as a voltage from anexternal source or supply (e.g., a battery, an AC-to-DC converter,etc.), relative to a ground potential (e.g., Vss).

As an example, if a programming voltage (e.g., 15V or more) is appliedto a specific word line, such as WL4, a pass voltage of 10V can beapplied to one or more other word lines, such as WL3, WL5, etc., toinhibit programming of non-targeted memory cells, or to retain thevalues stored on such memory cells not targeted for programming. As thedistance between an applied program voltage and the non-targeted memorycells increases, the pass voltage required to refrain from programmingthe non-targeted memory cells can decrease. For example, where aprogramming voltage of 15V is applied to WL4, a pass voltage of 10V canbe applied to WL3 and WL5, a pass voltage of 8V can be applied to WL2and WL6, a pass voltage of 7V can be applied to WL1 and WL7, etc. Inother examples, the pass voltages, or number of word lines, etc., can behigher or lower, or more or less.

The sense amplifiers 360, coupled to one or more of the data lines(e.g., first, second, or third bit lines (BL0-BL2) 320-322), can detectthe state of each memory cell in respective data lines by sensing avoltage or current on a particular data line.

Between applications of one or more programming pulses (e.g., Vpgm), averify operation can be performed to determine if a selected memory cellhas reached its intended programmed state. If the selected memory cellhas reached its intended programmed state, it can be inhibited fromfurther programming. If the selected memory cell has not reached itsintended programmed state, additional programming pulses can be applied.If the selected memory cell has not reached its intended programmedstate after a particular number of programming pulses (e.g., a maximumnumber), the selected memory cell, or a string, block, or pageassociated with such selected memory cell, can be marked as defective.

To erase a memory cell or a group of memory cells (e.g., erasure istypically performed in blocks or sub-blocks), an erasure voltage (Vers)(e.g., typically Vpgm) can be applied to the substrates (and thus thechannels, between the sources and drains) of the memory cells targetedfor erasure (e.g., using one or more bit lines, select gates, etc.),while the word lines of the targeted memory cells are kept at apotential, such as a ground potential (e.g., Vss), resulting in a chargetransfer (e.g., direct injection or Fowler-Nordheim (FN) tunneling,etc.) from the floating gates of the targeted memory cells to thechannels.

FIG. 4 illustrates an example block diagram of a memory device 400including a memory array 402 having a plurality of memory cells 404, andone or more circuits or components to provide communication with, orperform one or more memory operations on, the memory array 402. Thememory device 400 can include a row decoder 412, a column decoder 414,sense amplifiers 420, a page buffer 422, a selector 424, an input/output(I/O) circuit 426, and a memory control unit 430.

The memory cells 404 of the memory array 402 can be arranged in blocks,such as first and second blocks 402A, 402B. Each block can includesub-blocks. For example, the first block 402A can include first andsecond sub-blocks 402A₀, 402A_(n), and the second block 402B can includefirst and second sub-blocks 402B₀, 402B_(n). Each sub-block can includea number of physical pages, each page including a number of memory cells404. Although illustrated herein as having two blocks, each block havingtwo sub-blocks, and each sub-block having a number of memory cells 404,in other examples, the memory array 402 can include more or fewerblocks, sub-blocks, memory cells, etc. In other examples, the memorycells 404 can be arranged in a number of rows, columns, pages,sub-blocks, blocks, etc., and accessed using, for example, access lines406, first data lines 410, or one or more select gates, source lines,etc.

The memory control unit 430 can control memory operations of the memorydevice 400 according to one or more signals or instructions received oncontrol lines 432, including, for example, one or more clock signals orcontrol signals that indicate a desired operation (e.g., write, read,erase, etc.), or address signals (A0-AX) received on one or more addresslines 416. One or more devices external to the memory device 400 cancontrol the values of the control signals on the control lines 432, orthe address signals on the address line 416. Examples of devicesexternal to the memory device 400 can include, but are not limited to, ahost, a memory controller, a processor, or one or more circuits orcomponents not illustrated in FIG. 4.

The memory device 400 can use access lines 406 and first data lines 410to transfer data to (e.g., write or erase) or from (e.g., read) one ormore of the memory cells 404. The row decoder 412 and the column decoder414 can receive and decode the address signals (A0-AX) from the addressline 416, can determine which of the memory cells 404 are to beaccessed, and can provide signals to one or more of the access lines 406(e.g., one or more of a plurality of word lines (WL0-WLm)) or the firstdata lines 410 (e.g., one or more of a plurality of bit lines(BL0-BLn)), such as described above.

The memory device 400 can include sense circuitry, such as the senseamplifiers 420, configured to determine the values of data on (e.g.,read), or to determine the values of data to be written to, the memorycells 404 using the first data lines 410. For example, in a selectedstring of memory cells 404, one or more of the sense amplifiers 420 canread a logic level in the selected memory cell 404 in response to a readcurrent flowing in the memory array 402 through the selected string tothe data lines 410.

One or more devices external to the memory device 400 can communicatewith the memory device 400 using the I/O lines (DQ0-DQN) 408, addresslines 416 (A0-AX), or control lines 432. The input/output (I/O) circuit426 can transfer values of data in or out of the memory device 400, suchas in or out of the page buffer 422 or the memory array 402, using theI/O lines 408, according to, for example, the control lines 432 andaddress lines 416. The page buffer 422 can store data received from theone or more devices external to the memory device 400 before the data isprogrammed into relevant portions of the memory array 402, or can storedata read from the memory array 402 before the data is transmitted tothe one or more devices external to the memory device 400.

The column decoder 414 can receive and decode address signals (A0-AX)into one or more column select signals (CSEL1-CSELn). The selector 424(e.g., a select circuit) can receive the column select signals(CSEL1-CSELn) and select data in the page buffer 422 representing valuesof data to be read from or to be programmed into memory cells 404.Selected data can be transferred between the page buffer 422 and the I/Ocircuit 426 using second data lines 418.

The memory control unit 430 can receive positive and negative supplysignals, such as a supply voltage (Vcc) 434 and a negative supply (Vss)436 (e.g., a ground potential), from an external source or supply (e.g.,an internal or external battery, an AC-to-DC converter, etc.). Incertain examples, the memory control unit 430 can include a regulator428 to internally provide positive or negative supply signals.

When reading a memory cell in a NAND, a read voltage is applied to theNAND. For cells that store more than one bit, such as an MLC or TLCNAND, multiple read passes may be done to read each bit from the cellwith multiple read voltages. FIG. 5 shows a diagram 500 of reading aNAND according to some examples of the present disclosure. The diagram500 shows an SLC cell 505 and the two read phases of an MLC cell 510 and515. Typical voltage level distributions for each bit value combinationare shown on the line with greater voltages to the right. For the SLC,the distribution on the far left is what corresponds to a first bitvalue (e.g., 1) and the distribution on the far right is whatcorresponds to a second bit value (e.g., 0). There is a single readvoltage—Vread A. If the voltage in the cell is less than Vread A, thenthe cell is a 1, otherwise the cell is 0.

For the MLC, the distribution on the far left is what would correspondto a bit value of 11 and likewise the distribution on the far rightcorresponds to a bit value of 10. A first bit (called a lower page) ofthe MLC is read 510 by applying a first voltage level (e.g., Vread A) tothe cell. If the voltage in the cell is less than Vread A, then thelower page is a 1, otherwise if the voltage in the cell is greater thanVread A, the lower cell is a 0. Next, the second bit (called an upperpage) is read 515 with two separate voltage levels (Vread B and VreadC). If the voltage is between Vread B and Vread C then the upper page isa zero. Otherwise if the voltage is less than voltage threshold B ormore than voltage threshold C, then the upper page is one.

As previously described, in addition to the various voltages applied tothe cell that is being read, a passthrough voltage (Vpass) is applied tosurrounding cells. This passthrough voltage may be a voltage that ishigher than a read voltage, but lower than a voltage used to program acell. This passthrough voltage may slightly increase the charge storedin the surrounding cells. If the cell is exposed to the passthroughvoltage enough times (e.g., a nearby cell is read often), the valuestored in the cell may be changed. This phenomenon is called readdisturb.

FIG. 6 shows a diagram 600 of a read disturb effect on a chargedistribution of MLC NAND memory cells according to some examples of thepresent disclosure. The solid curves 605, 610, 615, and 620 indicate thenormal charge distributions that are expected given the shown bit valuesof the MLC cell. The dotted curves 605-1, 610-1, 615-1, and 620-1indicate an example expected distribution given an influence of a readdisturb effect. As can be appreciated, the expected voltagedistributions have shifted right (towards higher voltages). If thisshift is great enough, it can cause the cell to change its value. Forexample, a cell with the value 11 may flip to hold the value 01, and soon.

Typically. NAND devices deal with read disturb effects by scanning NANDcells to determine if they are suffering from, or likely suffering fromread disturb effects. The NAND may copy the value stored in cellssuffering from read effects into other cells, mark the original cells asbad, and eventually garbage collect the original cells so they can bereused. This read disturb scanning takes significant time andcomputational resources.

Disclosed in some examples, are methods, systems, and machine readablemediums which compensate for read-disturb effects by shifting the readvoltages used to read the value in a NAND cell based upon a readcounter. For example, the NAND memory device may have a read counterthat corresponds to a group of NAND cells (e.g., a page, a block, asuperblock). Anytime a NAND cell in the group is read, the read countermay be incremented. The read voltage. Vread, may be adjusted based onthe read counter to account for the read disturb voltage. The readcounter may be reset when all the cells in the group have been erasedand are ready for reprogramming. The use of the read counter to adjustthe voltages for the read command provides an efficient way to assessthe likelihood that read disturb effects has caused the thresholdvoltage of a cell to shift. Shifting the read voltage can allow the NANDto utilize the cell a longer amount of time before moving the contentsof the cell to a new cell and erasing the old cell.

For example, in FIG. 6, the Vread voltages, Vread A 630, Vread B, 625,and Vread C 635 may be shifted to a higher voltage. For example, Vread B625 may be shifted by ΔV2 627 to Vread B′ 625-1. Vread A 630 may beshifted by ΔV1 632 to Vread A′ 630-1, and Vread C may be shifted by ΔV3637 to be Vread C′ 635-1. In some examples, ΔV2 627, ΔV1632, and ΔV3 637may be a same amount. In other examples, ΔV2 627, ΔV1 632, and ΔV3 637may be different amounts. The amounts of ΔV2 627, ΔV1632, and ΔV3 637may be calculated based upon the read counter. For example, ifΔVReadDisturb is an average change in voltage resulting from applicationof a passthrough current to the cell for a single read and Read_Counteris the read counter, then ΔV1, ΔV2, and ΔV3 may equalΔVReadDisturb*Read_Counter. Thus, the read voltage may be a linearfunction of the counter, an expected read disturb amount per read, andthe base read voltage. For example: New Read Voltage=Base ReadVoltage+ΔVReadDisturb*Read_Counter

In other examples, a step function may be used, such that the ΔV1. ΔV2,and ΔV3 are increased an amount responsive to the read counter exceedingcertain thresholds. For example, ΔV1, ΔV2, and ΔV3 may be zero when theRead_Counter is less than A, ΔV1, ΔV2, and ΔV3 may be X when theRead_Counter is greater than or equal to A but less than B (where X>0),and ΔV1, ΔV2, and ΔV3 may be Y when the Read_Counter is greater than orequal to B (where Y>X). In some examples, the read counter may be a readcounter for any read occurring for one or more cells in a group, thegroup may be a superblock, a plane, a block, or the like.

Other factors may also be utilized to calculate a new voltage. Forexample, as the cell wears it may become more susceptible to readdisturb effects. In these examples, a wear level indicator may also befactored in. For example, the new voltage may be a linear function ofthe old voltage, the counter, an expected read disturb effect, and thewear level indicator. As one example: New Read Voltage=Base ReadVoltage+ΔVReadDisturb*Read_Counter+Wear_Factor, where the Wear_Factormay be a value based upon a wear indicator measurement.

The read counter may store a total number of read operations directed tothe cells in the group. The group may be a superblock, a plane, a block,a page, or the like. The read counter may be a total number of readoperations over a particular time—for example, a total number of readoperations since a last erase event on the group—e.g., since thesuperblock was last erased.

FIG. 7 shows a flowchart of a method 700 of reading a NAND memory cellaccording to some examples of the present disclosure. At operation 715the NAND controller may receive a read request. The read request mayindicate a NAND memory page (or other grouping of NAND cells) to read.At operation 720, the NAND controller may determine a read voltage—forexample, the NAND controller may utilize a Vread voltage for a desiredbit of the NAND cell that may be modified based upon a read counter thatis incremented each time a read is made to a cell (or a page, a block,or the like) in a group of cells serviced by the read counter. That is,the memory cells in the NAND may be grouped in a logical grouping thatis serviced by its own read counter. The read counter for the group ofthe NAND cell that is to be read is read from memory and the readvoltage may be determined based upon that. In some examples a first readvoltage (e.g., Vread A) may be determined which may be offset based uponthe value of the counter.

At operation 725 the read voltage may be applied to the cell todetermine at least part of the value of the cell. For example the VreadA may be applied to read a first bit of the cell. If there are more bitsto read then operations 720 and 725 are repeated for each bit. For eachbit, a different Vread voltage may be utilized at operation 720. Thisread voltage (as noted) may be increased based upon the read counter.Once all bits are read out of the memory cell, the read counter may beincremented at operation 735. At operation 740 the value of the cellthat was read may be returned to the host.

FIG. 8 shows a schematic of a memory controller 815. Memory controller815 may be an example of memory controller 115 of FIG. 1. Manager 825may be an example manger 125, management table 830 may be an example ofmanagement table 130. Controller 835 may be an example of controller135. Controller 835 may include a counter 855 that may track the numberof read requests for a particular group (e.g., a superblock) of NANDmemory cells. Reader 850 may handle requests from a host to read a valueof a NAND cell. Reader 850 may determine one or more read voltages Vreadthat may be determined based upon a normal read voltage for a particularbit of the NAND cell and an offset determined by a read counter aspreviously described. ECC 840 may be an example of ECC 140.

FIG. 9 illustrates a block diagram of an example machine 900 upon whichany one or more of the techniques (e.g., methodologies) discussed hereinmay perform. In alternative embodiments, the machine 900 may operate asa standalone device or may be connected (e.g., networked) to othermachines. In a networked deployment, the machine 900 may operate in thecapacity of a server machine, a client machine, or both in server-clientnetwork environments. In an example, the machine 900 may act as a peermachine in peer-to-peer (P2P) (or other distributed) networkenvironment. The machine 900 may be a personal computer (PC), a tabletPC, a set-top box (STB), a personal digital assistant (PDA), a mobiletelephone, a web appliance, an IoT device, automotive system, or anymachine capable of executing instructions (sequential or otherwise) thatspecify actions to be taken by that machine. Further, while only asingle machine is illustrated, the term “machine” shall also be taken toinclude any collection of machines that individually or jointly executea set (or multiple sets) of instructions to perform any one or more ofthe methodologies discussed herein, such as cloud computing, software asa service (SaaS), other computer cluster configurations.

Examples, as described herein, may include, or may operate by, logic,components, devices, packages, or mechanisms. Circuitry is a collection(e.g., set) of circuits implemented in tangible entities that includehardware (e.g., simple circuits, gates, logic, etc.). Circuitrymembership may be flexible over time and underlying hardwarevariability. Circuitries include members that may, alone or incombination, perform specific tasks when operating. In an example,hardware of the circuitry may be immutably designed to carry out aspecific operation (e.g., hardwired). In an example, the hardware of thecircuitry may include variably connected physical components (e.g.,execution units, transistors, simple circuits, etc.) including acomputer readable medium physically modified (e.g., magnetically,electrically, moveable placement of invariant massed particles, etc.) toencode instructions of the specific operation. In connecting thephysical components, the underlying electrical properties of a hardwareconstituent are changed, for example, from an insulator to a conductoror vice versa. The instructions enable participating hardware (e.g., theexecution units or a loading mechanism) to create members of thecircuitry in hardware via the variable connections to carry out portionsof the specific tasks when in operation. Accordingly, the computerreadable medium is communicatively coupled to the other components ofthe circuitry when the device is operating. In an example, any of thephysical components may be used in more than one member of more than onecircuitry. For example, under operation, execution units may be used ina first circuit of a first circuitry at one point in time and reused bya second circuit in the first circuitry, or by a third circuit in asecond circuitry at a different time.

The machine (e.g., computer system) 900 (e.g., the host device 105, thememory device 110, etc.) may include a hardware processor 902 (e.g., acentral processing unit (CPU), a graphics processing unit (GPU), ahardware processor core, or any combination thereof, such as the memorycontroller 115, etc.), a main memory 904 and a static memory 906, someor all of which may communicate with each other via an interlink (e.g.,bus) 908. The machine 900 may further include a display unit 910, analphanumeric input device 912 (e.g., a keyboard), and a user interface(UI) navigation device 914 (e.g., a mouse). In an example, the displayunit 910, input device 912 and UI navigation device 914 may be a touchscreen display. The machine 900 may additionally include a storagedevice (e.g., drive unit) 916, a signal generation device 918 (e.g., aspeaker), a network interface device 920, and one or more sensors 916,such as a global positioning system (GPS) sensor, compass,accelerometer, or other sensor. The machine 900 may include an outputcontroller 928, such as a serial (e.g., universal serial bus (USB),parallel, or other wired or wireless (e.g., infrared (IR), near fieldcommunication (NFC), etc.) connection to communicate or control one ormore peripheral devices (e.g., a printer, card reader, etc.).

The storage device 916 may include a machine readable medium 922 onwhich is stored one or more sets of data structures or instructions 924(e.g., software) embodying or utilized by any one or more of thetechniques or functions described herein. The instructions 924 may alsoreside, completely or at least partially, within the main memory 904,within static memory 906, or within the hardware processor 902 duringexecution thereof by the machine 900. In an example, one or anycombination of the hardware processor 902, the main memory 904, thestatic memory 906, or the storage device 916 may constitute the machinereadable medium 922.

While the machine readable medium 922 is illustrated as a single medium,the term “machine readable medium” may include a single medium ormultiple media (e.g., a centralized or distributed database, orassociated caches and servers) configured to store the one or moreinstructions 924.

The term “machine readable medium” may include any medium that iscapable of storing, encoding, or carrying instructions for execution bythe machine 900 and that cause the machine 900 to perform any one ormore of the techniques of the present disclosure, or that is capable ofstoring, encoding or carrying data structures used by or associated withsuch instructions. Non-limiting machine readable medium examples mayinclude solid-state memories, and optical and magnetic media. In anexample, a massed machine readable medium comprises a machine-readablemedium with a plurality of particles having invariant (e.g., rest) mass.Accordingly, massed machine-readable media are not transitorypropagating signals. Specific examples of massed machine readable mediamay include: non-volatile memory, such as semiconductor memory devices(e.g., Electrically Programmable Read-Only Memory (EPROM), ElectricallyErasable Programmable Read-Only Memory (EEPROM)) and flash memorydevices; magnetic disks, such as internal hard disks and removabledisks; magneto-optical disks; and CD-ROM and DVD-ROM disks.

The instructions 924 (e.g., software, programs, an operating system(OS), etc.) or other data are stored on the storage device 921, can beaccessed by the memory 904 for use by the processor 902. The memory 904(e.g., DRAM) is typically fast, but volatile, and thus a different typeof storage than the storage device 921 (e.g., an SSD), which is suitablefor long-term storage, including while in an “off” condition. Theinstructions 924 or data in use by a user or the machine 900 aretypically loaded in the memory 904 for use by the processor 902. Whenthe memory 904 is full, virtual space from the storage device 921 can beallocated to supplement the memory 904; however, because the storage 921device is typically slower than the memory 904, and write speeds aretypically at least twice as slow as read speeds, use of virtual memorycan greatly reduce user experience due to storage device latency (incontrast to the memory 904, e.g., DRAM). Further, use of the storagedevice 921 for virtual memory can greatly reduce the usable lifespan ofthe storage device 921.

In contrast to virtual memory, virtual memory compression (e.g., theLinux® kernel feature “ZRAM”) uses part of the memory as compressedblock storage to avoid paging to the storage device 921. Paging takesplace in the compressed block until it is necessary to write such datato the storage device 921. Virtual memory compression increases theusable size of memory 904, while reducing wear on the storage device921.

Storage devices optimized for mobile electronic devices, or mobilestorage, traditionally include MMC solid-state storage devices (e.g.,micro Secure Digital (microSD™) cards, etc.). MMC devices include anumber of parallel interfaces (e.g., an 8-bit parallel interface) with ahost device, and are often removable and separate components from thehost device. In contrast, eMMC™ devices are attached to a circuit boardand considered a component of the host device, with read speeds thatrival serial ATA™ (Serial AT (Advanced Technology) Attachment, or SATA)based SSD devices. However, demand for mobile device performancecontinues to increase, such as to fully enable virtual oraugmented-reality devices, utilize increasing networks speeds, etc. Inresponse to this demand, storage devices have shifted from parallel toserial communication interfaces. Universal Flash Storage (UFS) devices,including controllers and firmware, communicate with a host device usinga low-voltage differential signaling (LVDS) serial interface withdedicated read/write paths, further advancing greater read/write speeds.

The instructions 924 may further be transmitted or received over acommunications network 926 using a transmission medium via the networkinterface device 920 utilizing any one of a number of transfer protocols(e.g., frame relay, internet protocol (IP), transmission controlprotocol (TCP), user datagram protocol (UDP), hypertext transferprotocol (HTTP), etc.). Example communication networks may include alocal area network (LAN), a wide area network (WAN), a packet datanetwork (e.g., the Internet), mobile telephone networks (e.g., cellularnetworks). Plain Old Telephone (POTS) networks, and wireless datanetworks (e.g., Institute of Electrical and Electronics Engineers (IEEE)802.11 family of standards known as Wi-Fi®, IEEE 802.16 family ofstandards known as WiMax®), IEEE 802.15.4 family of standards,peer-to-peer (P2P) networks, among others. In an example, the networkinterface device 920 may include one or more physical jacks (e.g.,Ethernet, coaxial, or phone jacks) or one or more antennas to connect tothe communications network 926. In an example, the network interfacedevice 920 may include a plurality of antennas to wirelessly communicateusing at least one of single-input multiple-output (SIMO),multiple-input multiple-output (MIMO), or multiple-input single-output(MISO) techniques. The term “transmission medium” shall be taken toinclude any intangible medium that is capable of storing, encoding orcarrying instructions for execution by the machine 900, and includesdigital or analog communications signals or other intangible medium tofacilitate communication of such software.

The above detailed description includes references to the accompanyingdrawings, which form a part of the detailed description. The drawingsshow, by way of illustration, specific embodiments in which theinvention can be practiced. These embodiments are also referred toherein as “examples”. Such examples can include elements in addition tothose shown or described. However, the present inventors alsocontemplate examples in which only those elements shown or described areprovided. Moreover, the present inventors also contemplate examplesusing any combination or permutation of those elements shown ordescribed (or one or more aspects thereof), either with respect to aparticular example (or one or more aspects thereof), or with respect toother examples (or one or more aspects thereof) shown or describedherein.

In this document, the terms “a” or “an” are used, as is common in patentdocuments, to include one or more than one, independent of any otherinstances or usages of “at least one” or “one or more.” In thisdocument, the term “or” is used to refer to a nonexclusive or, such that“A or B” may include “A but not B,” “B but not A,” and “A and B,” unlessotherwise indicated. In the appended claims, the terms “including” and“in which” are used as the plain-English equivalents of the respectiveterms “comprising” and “wherein”. Also, in the following claims, theterms “including” and “comprising” are open-ended, that is, a system,device, article, or process that includes elements in addition to thoselisted after such a term in a claim are still deemed to fall within thescope of that claim. Moreover, in the following claims, the terms“first.” “second.” and “third.” etc, are used merely as labels, and arenot intended to impose numerical requirements on their objects.

In various examples, the components, controllers, processors, units,engines, or tables described herein can include, among other things,physical circuitry or firmware stored on a physical device. As usedherein. “processor” means any type of computational circuit such as, butnot limited to, a microprocessor, a microcontroller, a graphicsprocessor, a digital signal processor (DSP), or any other type ofprocessor or processing circuit, including a group of processors ormulti-core devices.

The term “horizontal” as used in this document is defined as a planeparallel to the conventional plane or surface of a substrate, such asthat underlying a wafer or die, regardless of the actual orientation ofthe substrate at any point in time. The term “vertical” refers to adirection perpendicular to the horizontal as defined above.Prepositions, such as “on,” “over,” and “under” are defined with respectto the conventional plane or surface being on the top or exposed surfaceof the substrate, regardless of the orientation of the substrate; andwhile “on” is intended to suggest a direct contact of one structurerelative to another structure which it lies “on” (in the absence of anexpress indication to the contrary); the terms “over” and “under” areexpressly intended to identify a relative placement of structures (orlayers, features, etc.), which expressly includes—but is not limitedto—direct contact between the identified structures unless specificallyidentified as such. Similarly, the terms “over” and “under” are notlimited to horizontal orientations, as a structure may be “over” areferenced structure if it is, at some point in time, an outermostportion of the construction under discussion, even if such structureextends vertically relative to the referenced structure, rather than ina horizontal orientation.

The terms “wafer” and “substrate” are used herein to refer generally toany structure on which integrated circuits are formed, and also to suchstructures during various stages of integrated circuit fabrication. Thefollowing detailed description is, therefore, not to be taken in alimiting sense, and the scope of the various embodiments is defined onlyby the appended claims, along with the full scope of equivalents towhich such claims are entitled.

Various embodiments according to the present disclosure and describedherein include memory utilizing a vertical structure of memory cells(e.g., NAND strings of memory cells). As used herein, directionaladjectives will be taken relative a surface of a substrate upon whichthe memory cells are formed (i.e., a vertical structure will be taken asextending away from the substrate surface, a bottom end of the verticalstructure will be taken as the end nearest the substrate surface and atop end of the vertical structure will be taken as the end farthest fromthe substrate surface).

As used herein, directional adjectives, such as horizontal, vertical,normal, parallel, perpendicular, etc., can refer to relativeorientations, and are not intended to require strict adherence tospecific geometric properties, unless otherwise noted. For example, asused herein, a vertical structure need not be strictly perpendicular toa surface of a substrate, but may instead be generally perpendicular tothe surface of the substrate, and may form an acute angle with thesurface of the substrate (e.g., between 60 and 120 degrees, etc.).

In some embodiments described herein, different doping configurationsmay be applied to a source-side select gate (SGS), a control gate (CG),and a drain-side select gate (SGD), each of which, in this example, maybe formed of or at least include polysilicon, with the result such thatthese tiers (e.g., polysilicon, etc.) may have different etch rates whenexposed to an etching solution. For example, in a process of forming amonolithic pillar in a 3D semiconductor device, the SGS and the CG mayform recesses, while the SGD may remain less recessed or even notrecessed. These doping configurations may thus enable selective etchinginto the distinct tiers (e.g., SGS, CG, and SGD) in the 3D semiconductordevice by using an etching solution (e.g., tetramethylammonium hydroxide(TMCH)).

Operating a memory cell, as used herein, includes reading from, writingto, or erasing the memory cell. The operation of placing a memory cellin an intended state is referred to herein as “programming,” and caninclude both writing to or erasing from the memory cell (e.g., thememory cell may be programmed to an erased state).

According to one or more embodiments of the present disclosure, a memorycontroller (e.g., a processor, controller, firmware, etc.) locatedinternal or external to a memory device, is capable of determining(e.g., selecting, setting, adjusting, computing, changing, clearing,communicating, adapting, deriving, defining, utilizing, modifying,applying, etc.) a quantity of wear cycles, or a wear state (e.g.,recording wear cycles, counting operations of the memory device as theyoccur, tracking the operations of the memory device it initiates,evaluating the memory device characteristics corresponding to a wearstate, etc.)

According to one or more embodiments of the present disclosure, a memoryaccess device may be configured to provide wear cycle information to thememory device with each memory operation. The memory device controlcircuitry (e.g., control logic) may be programmed to compensate formemory device performance changes corresponding to the wear cycleinformation. The memory device may receive the wear cycle informationand determine one or more operating parameters (e.g., a value,characteristic) in response to the wear cycle information.

It will be understood that when an element is referred to as being “on,”“connected to” or “coupled with” another element, it can be directly on,connected, or coupled with the other element or intervening elements maybe present. In contrast, when an element is referred to as being“directly on,” “directly connected to” or “directly coupled with”another element, there are no intervening elements or layers present. Iftwo elements are shown in the drawings with a line connecting them, thetwo elements can be either be coupled, or directly coupled, unlessotherwise indicated.

Method examples described herein can be machine or computer-implementedat least in part. Some examples can include a computer-readable mediumor machine-readable medium encoded with instructions operable toconfigure an electronic device to perform methods as described in theabove examples. An implementation of such methods can include code, suchas microcode, assembly language code, a higher-level language code, orthe like. Such code can include computer readable instructions forperforming various methods. The code may form portions of computerprogram products. Further, the code can be tangibly stored on one ormore volatile or non-volatile tangible computer-readable media, such asduring execution or at other times. Examples of these tangiblecomputer-readable media can include, but are not limited to, hard disks,removable magnetic disks, removable optical disks (e.g., compact discsand digital video disks), magnetic cassettes, memory cards or sticks,random access memories (RAMs), read only memories (ROMs), solid statedrives (SSDs), Universal Flash Storage (UFS) device, embedded MMC (eMMC)device, and the like.

The above description is intended to be illustrative, and notrestrictive. For example, the above-described examples (or one or moreaspects thereof) may be used in combination with each other. Otherembodiments can be used, such as by one of ordinary skill in the artupon reviewing the above description. It is submitted with theunderstanding that it will not be used to interpret or limit the scopeor meaning of the claims. Also, in the above Detailed Description,various features may be grouped together to streamline the disclosure.This should not be interpreted as intending that an unclaimed disclosedfeature is essential to any claim. Rather, inventive subject matter maylie in less than all features of a particular disclosed embodiment.Thus, the following claims are hereby incorporated into the DetailedDescription, with each claim standing on its own as a separateembodiment, and it is contemplated that such embodiments can be combinedwith each other in various combinations or permutations. The scope ofthe invention should be determined with reference to the appendedclaims, along with the full scope of equivalents to which such claimsare entitled.

OTHER NOTES AND EXAMPLES

Example 1 is a NAND memory device comprising: a NAND memory arrayincluding a first pool of memory; a controller executing instructionsand performing operations comprising: receiving a command from a host toread a value of at least one cell from the first pool of memory;determining a read voltage to apply to the at least one cell based upona count of a number of previous reads during a period of time to a groupof cells, the group of cells including the at least one cell; andapplying the read voltage to the at least one cell.

In Example 2, the subject matter of Example 1 optionally includeswherein the operations of determining the read voltage to apply to theat least one cell comprises determining a first read voltage for a firstpage of the NAND memory device, the first page including the at leastone cell, and wherein the operations of applying the read voltage to theat least one cell includes applying the first read voltage to the atleast one cell to read a first value of the at least one cell.

In Example 3, the subject matter of Example 2 optionally includeswherein the operations further comprise: determining second and thirdread voltages to apply to the at least one cell based upon the count;and applying the second and third read voltages to the at least one cellto read second and third values of the at least one cell.

In Example 4, the subject matter of Example 3 optionally includeswherein the operations of determining the read voltage comprises addinga first offset value to a base read voltage, wherein determining thesecond read voltage comprises adding a second offset to a second baseread voltage, and wherein determining the third read voltage comprisesadding a third offset to a third base read voltage, wherein at least twoof the first offset value, the second offset value, and the third offsetvalue are different values.

In Example 5, the subject matter of any one or more of Examples 1-4optionally include wherein the operations of determining the readvoltage comprises adding a first offset value to a base read voltage,wherein the first offset value is calculated as a linear function of thecount.

In Example 6, the subject matter of any one or more of Examples 1-5optionally include wherein the operations of determining the readvoltage comprises adding a first offset value to a base read voltage,wherein the first offset value is calculated as a stepwise function ofthe count.

In Example 7, the subject matter of any one or more of Examples 1-6optionally include wherein the operations of determining the readvoltage to apply to the at least one cell based upon the count comprisesdetermining the read voltage based upon the count and based upon a wearindicator.

In Example 8, the subject matter of any one or more of Examples 1-7optionally include wherein the operations further comprise reading thevalue of the at least one cell and sending the value to the host.

In Example 9, the subject matter of any one or more of Examples 1-8optionally include wherein the NAND memory device is a three dimensionalNAND device.

Example 10 is a method performed by a NAND memory device, the methodcomprising: receiving a command from a host to read a value of at leastone cell from a first pool of memory of the NAND memory device;determining a read voltage to apply to the at least one cell based upona count of a number of previous reads during a period of time to a groupof cells, the group of cells including the at least one cell; andapplying the read voltage to the at least one cell.

In Example 11, the subject matter of Example 10 optionally includeswherein determining the read voltage to apply to the at least one cellcomprises determining a first read voltage for a first page of the NANDmemory device, the first page including the at least one cell, andwherein applying the read voltage to the at least one cell includesapplying the first read voltage to the at least one cell to read a firstvalue of the at least one cell.

In Example 12, the subject matter of Example 11 optionally includeswherein the method further comprises: determining second and third readvoltages to apply to the at least one cell based upon the count; andapplying the second and third read voltages to the at least one cell toread second and third values of the at least one cell.

In Example 13, the subject matter of Example 12 optionally includeswherein determining the read voltage comprises adding a first offsetvalue to a base read voltage, wherein determining the second readvoltage comprises adding a second offset to a second base read voltage,and wherein determining the third read voltage comprises adding a thirdoffset to a third base read voltage, wherein at least two of the firstoffset value, the second offset value, and the third offset value aredifferent values.

In Example 14, the subject matter of any one or more of Examples 10-13optionally include wherein determining the read voltage comprises addinga first offset value to a base read voltage, wherein the first offsetvalue is calculated as a linear function of the count.

In Example 15, the subject matter of any one or more of Examples 10-14optionally include wherein determining the read voltage comprises addinga first offset value to a base read voltage, wherein the first offsetvalue is calculated as a stepwise function of the count.

In Example 16, the subject matter of any one or more of Examples 10-15optionally include wherein determining the read voltage to apply to theat least one cell based upon the count comprises determining the readvoltage based upon the count and based upon a wear indicator.

In Example 17, the subject matter of any one or more of Examples 10-16optionally include wherein the method further comprises reading thevalue of the at least one cell and sending the value to the host.

In Example 18, the subject matter of any one or more of Examples 10-17optionally include wherein the NAND memory device is a three dimensionalNAND device.

Example 19 is a machine-readable medium comprising instructions, whichwhen performed by a machine, causes the machine to perform operationscomprising: receiving a command from a host to read a value of at leastone cell from a first pool of memory cells in a NAND memory device;determining a read voltage to apply to the at least one cell based upona count of a number of previous reads during a period of time to a groupof cells, the group of cells including the at least one cell; andapplying the read voltage to the at least one cell.

In Example 20, the subject matter of Example 19 optionally includeswherein the operations of determining the read voltage to apply to theat least one cell comprises determining a first read voltage for a firstpage of the NAND memory device, the first page including the at leastone cell, and wherein applying the read voltage to the at least one cellincludes applying the first read voltage to the at least one cell toread a first value of the at least one cell.

In Example 21, the subject matter of Example 20 optionally includeswherein the operations further comprise: determining second and thirdread voltages to apply to the at least one cell based upon the count;and applying the second and third read voltages to the at least one cellto read second and third values of the at least one cell.

In Example 22, the subject matter of Example 21 optionally includeswherein the operations of determining the read voltage comprises addinga first offset value to a base read voltage, wherein determining thesecond read voltage comprises adding a second offset to a second baseread voltage, wherein determining the third read voltage comprisesadding a third offset to a third base read voltage, wherein at least twoof the first offset value, the second offset value, and the third offsetvalue are different values.

In Example 23, the subject matter of any one or more of Examples 19-22optionally include wherein the operations of determining the readvoltage comprises adding a first offset value to a base read voltage,wherein the first offset value is calculated as a linear function of thecount.

In Example 24, the subject matter of any one or more of Examples 19-23optionally include wherein the operations of determining the readvoltage comprises adding a first offset value to a base read voltage,wherein the first offset value is calculated as a stepwise function ofthe count.

In Example 25, the subject matter of any one or more of Examples 19-24optionally include wherein the operations of determining the readvoltage to apply to the at least one cell based upon the count comprisesdetermining the read voltage based upon the count and based upon a wearindicator.

In Example 26, the subject matter of any one or more of Examples 19-25optionally include wherein the operations further comprise reading thevalue of the at least one cell and sending the value to the host.

In Example 27, the subject matter of any one or more of Examples 19-26optionally include wherein the NAND memory device is a three dimensionalNAND memory device.

Example 28 is a NAND memory device comprising: means for receiving acommand from a host to read a value of at least one cell from a firstpool of memory of the NAND memory device; means for determining a readvoltage to apply to the at least one cell based upon a count of a numberof previous reads during a period of time to a group of cells, the groupof cells including the at least one cell; and means for applying theread voltage to the at least one cell.

In Example 29, the subject matter of Example 28 optionally includeswherein the means for determining the read voltage to apply to the atleast one cell comprises means for determining a first read voltage fora first page of the NAND memory device, the first page including the atleast one cell, and wherein the means for applying the read voltage tothe at least one cell includes means for applying the first read voltageto the at least one cell to read a first value of the at least one cell.

In Example 30, the subject matter of Example 29 optionally includeswherein the memory device further comprises: means for determiningsecond and third read voltages to apply to the at least one cell basedupon the count; and means for applying the second and third readvoltages to the at least one cell to read second and third values of theat least one cell.

In Example 31, the subject matter of Example 30 optionally includeswherein the means for determining the read voltage comprises adding afirst offset value to a base read voltage, wherein the means fordetermining the second read voltage comprises means for adding a secondoffset to a second base read voltage, and wherein means for determiningthe third read voltage comprises means for adding a third offset to athird base read voltage, wherein at least two of the first offset value,the second offset value, and the third offset value are differentvalues.

In Example 32, the subject matter of any one or more of Examples 28-31optionally include wherein the means for determining the read voltagecomprises means for adding a first offset value to a base read voltage,wherein the first offset value is calculated as a linear function of thecount.

In Example 33, the subject matter of any one or more of Examples 28-32optionally include wherein the means for determining the read voltagecomprises means for adding a first offset value to a base read voltage,wherein the first offset value is calculated as a stepwise function ofthe count.

In Example 34, the subject matter of any one or more of Examples 28-33optionally include wherein means for determining the read voltage toapply to the at least one cell based upon the count comprises means fordetermining the read voltage based upon the count and based upon a wearindicator.

In Example 35, the subject matter of any one or more of Examples 28-34optionally include wherein the device further comprises means forreading the value of the at least one cell and means for sending thevalue to the host.

In Example 36, the subject matter of any one or more of Examples 28-35optionally include wherein the NAND memory device is a three dimensionalNAND memory device.

1. A memory device comprising: a memory array including a pool ofmemory; a controller configured to perform operations comprising:receiving a command to read a value of a cell from the pool of memory;determining a read voltage to apply to the cell by adding an offsetvalue to a base read voltage, the offset value calculated as a stepwisefunction of a count of a number of previous reads during a period oftime to the cell; and applying the read voltage to the cell.
 2. Thememory device of claim 1, wherein the command is to read values of agroup of cells comprising the cell, the group of cells being one or moreof a page, a sub-block, a block, a superblock, and a plane of the memoryarray.
 3. The memory device of claim 1, wherein the receiving of thecommand comprises receiving the command from a host.
 4. The memorydevice of claim 3, wherein the operations further comprise transmittingthe value of the cell to the host.
 5. The memory device of claim 1,wherein the read voltage is a first read voltage, the operations furthercomprise: determining second and third read voltages to apply to thecell based upon the count; and applying the second and third readvoltages to the cell to read second and third values of the cell.
 6. Thememory device of claim 5, wherein: the determining of the second readvoltage comprises adding a second offset value to a second base readvoltage, and the determining of the third read voltage comprises addinga third offset value to a third base read voltage.
 7. The memory deviceof claim 6, wherein at least two of the offset value, the second offsetvalue, and the third offset value are different values.
 8. The memorydevice of claim 6, wherein the controller determines at least one of thefirst read voltage, the second read voltage, and the third read voltagebased further on a wear indicator.
 9. The memory device of claim 5,wherein: the value of the cell comprises a first bit and a second bit;and the applying of the first read voltage, the second read voltage, andthe third read voltage to the cell at different times to read the valueof the cell comprises: applying the first read voltage to the cell at afirst time to determine the first bit of the value of the cell; andapplying the second read voltage to the cell at a second time andapplying the third read voltage to the cell at a third time to determinethe second bit of the value of the cell.
 10. The memory device of claim1, wherein the period of time corresponds to time since a most recenterase event for the cell.
 11. The memory device of claim 1, wherein theoperations further comprise resetting the count in response to the cellbeing erased.
 12. The memory device of claim 1, wherein the memorydevice comprises a NAND memory device, and wherein the memory arraycomprises a NAND memory array.
 13. A method comprising: receiving, by amemory device, a command to read a value of a cell from a pool ofmemory; determining, by the memory device, a read voltage to apply tothe cell by adding an offset value to a base read voltage, the offsetvalue calculated as a stepwise function of a count of a number ofprevious reads during a period of time to the cell; and applying, by thememory device, the read voltage to the cell.
 14. The method of claim 13,wherein the command is to read values of a group of cells comprising thecell, the group of cells being one or more of a page, a sub-block, ablock, a superblock, and a plane of a memory array.
 15. The method ofclaim 13, wherein the receiving of the command comprises receiving thecommand from a host.
 16. The method of claim 13, wherein the readvoltage is a first read voltage, the method further comprising:determining second and third read voltages to apply to the cell basedupon the count; and applying the second and third read voltages to thecell to read second and third values of the cell.
 17. The method ofclaim 16, wherein: the determining of the second read voltage comprisesadding a second offset value to a second base read voltage, and thedetermining of the third read voltage comprises adding a third offsetvalue to a third base read voltage.
 18. A machine-readable mediumcomprising instructions, which, performed by a machine, causes themachine to perform operations comprising: receiving a command to read avalue of a cell from a pool of memory; determining a read voltage toapply to the cell by adding an offset value to a base read voltage, theoffset value calculated as a stepwise function of a count of a number ofprevious reads during a period of time to the cell; and applying theread voltage to the cell.
 19. The machine-readable medium of claim 18,wherein the period of time corresponds to time since a most recent eraseevent for the cell.
 20. The machine-readable medium of claim 18, whereinthe operations further comprise resetting the count in response to thecell being erased.